一种基于浮动门mos的多值联想存储器

T. Hanyu, T. Higuchi
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引用次数: 1

摘要

提出了一种用于高速信息搜索的数字串行多值关联存储器VLSI。VLSI中处理元件(PE)的输入和输出数据分别由适当的多值数字直接编码,因此搜索操作可以通过多值向下文字和通闸的组合有效地描述。此外,多值存储信息存储在每个PE通过编程的阈值下文字,可以很容易地实现使用特殊的MOS晶体管,称为浮栅MOS晶体管。结果表明,与相应的二进制实现相比,5值联想存储器中的互连数和晶体管数可分别减少25%和53%。
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A floating-gate-MOS-based multiple-valued associative memory
A digit-serial, multiple-valued associative memory VLSI for high-speed information search is presented. Input and output data of a processing element (PE) in the VLSI are directly encoded by appropriate multiple-valued digits, respectively, so that search operations are efficiently described by the combination of a multiple-valued down literals and pass gates. Moreover, multiple-valued memory information is stored in each PE by programming the threshold of the down literal which can be easily implemented using special MOS transistors, called floating-gate MOS transistors. It is demonstrated that the number of interconnections and transistors in the 5-valued associative memory can be reduced to 25% and 53%, respectively, in comparison with the corresponding binary implementation.<>
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A floating-gate-MOS-based multiple-valued associative memory On the implementation of set-valued non-Boolean switching functions A transformation of multiple-valued input two-valued output functions and its application to simplification of exclusive-or sum-of-products expressions A formal semantical approach to fuzzy logic Fundamental properties of Kleene-Stone logic functions
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