{"title":"热氧化过程中硅纳米线变薄效应的二维模拟","authors":"S. Kalinin, A. Egorkin","doi":"10.1109/EDM.2015.7184479","DOIUrl":null,"url":null,"abstract":"The numerical simulation of the silicon nanowire (SiNW) thinning effect during the low-temperature dry thermal oxidation is carried out. For the simulation the two-dimensional mathematical model of the silicon thermal oxidation were used. It takes into account the dependence of the oxidation rate on mechanical stresses occurring in the structure and silicon dioxide nonlinear viscoelastic behavior. Obtained simulation results were compared with experimental data. The models parameters calibration was carried out.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Two-dimensional simulation of the silicon nanowires thinning effect during the thermal oxidation\",\"authors\":\"S. Kalinin, A. Egorkin\",\"doi\":\"10.1109/EDM.2015.7184479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The numerical simulation of the silicon nanowire (SiNW) thinning effect during the low-temperature dry thermal oxidation is carried out. For the simulation the two-dimensional mathematical model of the silicon thermal oxidation were used. It takes into account the dependence of the oxidation rate on mechanical stresses occurring in the structure and silicon dioxide nonlinear viscoelastic behavior. Obtained simulation results were compared with experimental data. The models parameters calibration was carried out.\",\"PeriodicalId\":213801,\"journal\":{\"name\":\"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2015.7184479\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2015.7184479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Two-dimensional simulation of the silicon nanowires thinning effect during the thermal oxidation
The numerical simulation of the silicon nanowire (SiNW) thinning effect during the low-temperature dry thermal oxidation is carried out. For the simulation the two-dimensional mathematical model of the silicon thermal oxidation were used. It takes into account the dependence of the oxidation rate on mechanical stresses occurring in the structure and silicon dioxide nonlinear viscoelastic behavior. Obtained simulation results were compared with experimental data. The models parameters calibration was carried out.
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