氮化镓基深紫外发光二极管和激光二极管的研制

2015 12th China International Forum on Solid State Lighting (SSLCHINA) Pub Date : 2015-12-21 DOI:10.1109/SSLCHINA.2015.7360677

Yanan Guo, Yun Zhang, Junxi Wang, Jianchang Yan, Yingdong Tian, Xiang Chen, Lili Sun, T. Wei, Jinmin Li

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引用次数: 0

摘要

最近，我们的小组已经展示了几种方法来提高深紫外(DUV) led和ld的性能。通过插入多个具有调制源流的中温AlN层，获得了高质量、无裂纹的AlN模板。使用掺硅的AlGaN mqw，由于晶体和界面质量的改善，内部量子效率(IQE)提高了41%。为了提高光提取效率(LEE)，还提出了一种易于实现的Al反射器技术。我们获得了280 nm LED在100 mA下的光输出功率(LOP)为6.31 mW，并实现了288 nm的光泵浦受激发射。

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Development of AlGaN-based deep ultraviolet light-emitting diodes and laser diodes

Recently, our group has demonstrated several methods to improve the performance of deep ultraviolet (DUV) LEDs and LDs. A high-quality and crack-free AlN template has been achieved by inserting multiple middle-temperature AlN layers with modulated source flow. Using silicon-doped AlGaN MQWs, the internal quantum efficiency (IQE) has been increased by 41% due to the improvement of crystal and interface quality. An easy-facilitative Al reflector technique has been also proposed to enhance the light extraction efficiency (LEE). We obtained light output power (LOP) of 6.31 mW for the 280-nm LED at 100 mA, and realized optical pumping stimulated emission at 288 nm.

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2015 12th China International Forum on Solid State Lighting (SSLCHINA)

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