肖特基势垒和可重构场效应晶体管的均匀直流紧凑模型

2021 IEEE Latin America Electron Devices Conference (LAEDC) Pub Date : 2021-04-19 DOI:10.1109/LAEDC51812.2021.9437954

C. Roemer, G. Darbandy, M. Schwarz, J. Trommer, A. Heinzig, T. Mikolajick, W. Weber, B. Iñíguez, A. Kloes

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引用次数: 1

摘要

本文提出了一种封闭的、基于物理的紧凑模型，用于计算双栅肖特基势垒场效应晶体管(sbfet)和可重构场效应晶体管(rfet)的直流特性。因此，该模型计算了漏极电流，漏极电流由通过肖特基势垒的场发射和通过肖特基势垒的热离子发射组成。为了验证该模型，本文给出了sbfet和rfet中计算电流的结果，并将其与模拟器件和测量值的转移特性进行了比较，结果显示出很好的一致性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors

This paper presents a closed-form, physics-based compact model which is used to calculate the DC characteristics of double gate Schottky barrier field-effect transistors (SBFETs) and reconfigurable field-effect transistors (RFETs). Therefore, the model calculates the drain current which consists of field emission through the Schottky barrier and thermionic emission over the barrier. In order to validate the model, this paper shows results for the calculated current in SBFETs and RFETs compared to transfer characteristics of simulated devices and measurements, which show a good agreement.

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2021 IEEE Latin America Electron Devices Conference (LAEDC)

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