将运算放大器电路噪声与模拟设计应用中的器件闪烁(1/f)噪声相关联

2009 IEEE International SOC Conference (SOCC) Pub Date : 2009-09-01 DOI:10.1109/SOCCON.2009.5398062

P. Srinivasan, A. Marshall

{"title":"将运算放大器电路噪声与模拟设计应用中的器件闪烁(1/f)噪声相关联","authors":"P. Srinivasan, A. Marshall","doi":"10.1109/SOCCON.2009.5398062","DOIUrl":null,"url":null,"abstract":"Component noise is becoming more of an issue as device sizes reduce. Using a 45nm CMOS process we evaluate a method to correlate noise in operational amplifiers with transistor noise at low-frequencies. This reduces test time, and provides an alternative method to characterize and model 1/f noise of individual devices.","PeriodicalId":303505,"journal":{"name":"2009 IEEE International SOC Conference (SOCC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Correlating op-amp circuit noise with device flicker (1/f) noise for analog design applications\",\"authors\":\"P. Srinivasan, A. Marshall\",\"doi\":\"10.1109/SOCCON.2009.5398062\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Component noise is becoming more of an issue as device sizes reduce. Using a 45nm CMOS process we evaluate a method to correlate noise in operational amplifiers with transistor noise at low-frequencies. This reduces test time, and provides an alternative method to characterize and model 1/f noise of individual devices.\",\"PeriodicalId\":303505,\"journal\":{\"name\":\"2009 IEEE International SOC Conference (SOCC)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 IEEE International SOC Conference (SOCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOCCON.2009.5398062\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International SOC Conference (SOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCCON.2009.5398062","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

随着设备尺寸的减小，元件噪声问题也越来越严重。利用45纳米CMOS工艺，我们评估了一种将运算放大器中的噪声与低频晶体管噪声相关联的方法。这减少了测试时间，并提供了另一种方法来表征和模拟单个器件的1/f噪声。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Correlating op-amp circuit noise with device flicker (1/f) noise for analog design applications

Component noise is becoming more of an issue as device sizes reduce. Using a 45nm CMOS process we evaluate a method to correlate noise in operational amplifiers with transistor noise at low-frequencies. This reduces test time, and provides an alternative method to characterize and model 1/f noise of individual devices.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2009 IEEE International SOC Conference (SOCC)

自引率

0.00%

发文量