{"title":"无衬底漏电流的JFET钳位自举二极管(JPBD)集成到120V BCDMOS工艺","authors":"Sunglyong Kim, Jongjib Kim, Sunhak Lee, Hyemi Kim","doi":"10.1109/ISPSD.2013.6694447","DOIUrl":null,"url":null,"abstract":"A new concept to realize the usage of a high-voltage bootstrap diode without substrate leakage current for 120 V high-side-driver application is proposed and verified by 2D simulation. The combination of high-voltage (HV) JFET and medium-voltage (MV) diode with proper modification to avoid substrate leakage current at forward conduction state and high-blocking voltage at off state for integrated bootstrap operation is proposed. Simulation results showed 130 V of breakdown voltage and 0.79 V of FVD (forward voltage drop) @ 100 A/cm2 without substrate leakage current at conduction mode.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"280 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"JFET pinched bootstrap diode (JPBD) without substrate leakage current integration to 120V BCDMOS process\",\"authors\":\"Sunglyong Kim, Jongjib Kim, Sunhak Lee, Hyemi Kim\",\"doi\":\"10.1109/ISPSD.2013.6694447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new concept to realize the usage of a high-voltage bootstrap diode without substrate leakage current for 120 V high-side-driver application is proposed and verified by 2D simulation. The combination of high-voltage (HV) JFET and medium-voltage (MV) diode with proper modification to avoid substrate leakage current at forward conduction state and high-blocking voltage at off state for integrated bootstrap operation is proposed. Simulation results showed 130 V of breakdown voltage and 0.79 V of FVD (forward voltage drop) @ 100 A/cm2 without substrate leakage current at conduction mode.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"280 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694447\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
JFET pinched bootstrap diode (JPBD) without substrate leakage current integration to 120V BCDMOS process
A new concept to realize the usage of a high-voltage bootstrap diode without substrate leakage current for 120 V high-side-driver application is proposed and verified by 2D simulation. The combination of high-voltage (HV) JFET and medium-voltage (MV) diode with proper modification to avoid substrate leakage current at forward conduction state and high-blocking voltage at off state for integrated bootstrap operation is proposed. Simulation results showed 130 V of breakdown voltage and 0.79 V of FVD (forward voltage drop) @ 100 A/cm2 without substrate leakage current at conduction mode.
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