A. Sogoyan, S.V. Cherepko, V. Pershenkov, V. Rogov, V.N. Ulimov, V. Emelianov
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Thermal- and radiation-induced interface traps in MOS devices
The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation.
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