P. Marconcini, A. Cresti, F. Triozon, G. Fiori, B. Biel, Y. Niquet, M. Macucci, S. Roche
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Electron-hole transport asymmetry in boron-doped graphene field effect transistors
One of the main drawbacks of undoped graphene for digital electronics applications is its am-bipolar behavior. Here we study the trasfer characteristics of transistors based on boron-doped graphene nanoribbons with atomic concentrations up to 0.6%, showing that the presence of doping generates a clear electron-hole transport asymmetry. In order to obtain these results, we introduce a method to accurately reproduce density functional theory (DFT) results using a selfconsistent tight-binding (TB) model with a proper distribution of fixed charges.
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