{"title":"用于传感器低温模拟接口的抗辐射差分运算放大器","authors":"N. Prokopenko, A. Bugakova, I. Pakhomov","doi":"10.1109/EWDTS.2016.7807727","DOIUrl":null,"url":null,"abstract":"The article considers a new architecture of the BiJFet differential difference operational amplifier (DDA) on the base of single-ended differential stages, providing small values of systematic component of the offset voltage (Vos) in conditions of radiation and low-temperature degradation of current gains of the bipolar transistor base (β). The main equations are obtained, which allow formulating the requirements to the functional nodes of DDA - current mirrors and an output buffer amplifier, at which the effect cancellation P of the applied transistors is provided. The results of the computer simulation of BiJFet-DDA in the range of temperature -140° ÷ +100° and neutron flux up to 5.1013 n/cm2 are given. They show that its magnitude Vos is not bigger than unities of /V.","PeriodicalId":364686,"journal":{"name":"2016 IEEE East-West Design & Test Symposium (EWDTS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"The radiation-hardened differential difference operational amplifiers for operation in the low-temperature analog interfaces of sensors\",\"authors\":\"N. Prokopenko, A. Bugakova, I. Pakhomov\",\"doi\":\"10.1109/EWDTS.2016.7807727\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The article considers a new architecture of the BiJFet differential difference operational amplifier (DDA) on the base of single-ended differential stages, providing small values of systematic component of the offset voltage (Vos) in conditions of radiation and low-temperature degradation of current gains of the bipolar transistor base (β). The main equations are obtained, which allow formulating the requirements to the functional nodes of DDA - current mirrors and an output buffer amplifier, at which the effect cancellation P of the applied transistors is provided. The results of the computer simulation of BiJFet-DDA in the range of temperature -140° ÷ +100° and neutron flux up to 5.1013 n/cm2 are given. They show that its magnitude Vos is not bigger than unities of /V.\",\"PeriodicalId\":364686,\"journal\":{\"name\":\"2016 IEEE East-West Design & Test Symposium (EWDTS)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE East-West Design & Test Symposium (EWDTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EWDTS.2016.7807727\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE East-West Design & Test Symposium (EWDTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2016.7807727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The radiation-hardened differential difference operational amplifiers for operation in the low-temperature analog interfaces of sensors
The article considers a new architecture of the BiJFet differential difference operational amplifier (DDA) on the base of single-ended differential stages, providing small values of systematic component of the offset voltage (Vos) in conditions of radiation and low-temperature degradation of current gains of the bipolar transistor base (β). The main equations are obtained, which allow formulating the requirements to the functional nodes of DDA - current mirrors and an output buffer amplifier, at which the effect cancellation P of the applied transistors is provided. The results of the computer simulation of BiJFet-DDA in the range of temperature -140° ÷ +100° and neutron flux up to 5.1013 n/cm2 are given. They show that its magnitude Vos is not bigger than unities of /V.
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