{"title":"利用光反射光谱和棱镜耦合器方法表征II-VI合金半导体层","authors":"W. Bala","doi":"10.1109/ICTON.2000.874120","DOIUrl":null,"url":null,"abstract":"Epitaxial films of Zn1-xMgxSe have been grown with thicknesses up to 2 micrometers on GaAs [100] oriented substrates at different temperatures by MBE method. The growth of a range of epitaxial zinc sulphoselenide alloys and the growth of zinc selenide on [111] zinc telluride crystals are also reported and the significance of such films for applications in integrated optics is discussed. The refractive indices are determined experimentally by photoreflectance spectroscopy and prism-coupler method as a function of their composition. The refractive index of thin film zinc selenide alloys, determined from the measured effective indices of guided modes excited by a prism coupler, is shown to be reproducible and close to values measured for bulk material.","PeriodicalId":314041,"journal":{"name":"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of II-VI alloy semiconductor layers by photoreflectance spectroscopy and prism-coupler method\",\"authors\":\"W. Bala\",\"doi\":\"10.1109/ICTON.2000.874120\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Epitaxial films of Zn1-xMgxSe have been grown with thicknesses up to 2 micrometers on GaAs [100] oriented substrates at different temperatures by MBE method. The growth of a range of epitaxial zinc sulphoselenide alloys and the growth of zinc selenide on [111] zinc telluride crystals are also reported and the significance of such films for applications in integrated optics is discussed. The refractive indices are determined experimentally by photoreflectance spectroscopy and prism-coupler method as a function of their composition. The refractive index of thin film zinc selenide alloys, determined from the measured effective indices of guided modes excited by a prism coupler, is shown to be reproducible and close to values measured for bulk material.\",\"PeriodicalId\":314041,\"journal\":{\"name\":\"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTON.2000.874120\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2000.874120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterization of II-VI alloy semiconductor layers by photoreflectance spectroscopy and prism-coupler method
Epitaxial films of Zn1-xMgxSe have been grown with thicknesses up to 2 micrometers on GaAs [100] oriented substrates at different temperatures by MBE method. The growth of a range of epitaxial zinc sulphoselenide alloys and the growth of zinc selenide on [111] zinc telluride crystals are also reported and the significance of such films for applications in integrated optics is discussed. The refractive indices are determined experimentally by photoreflectance spectroscopy and prism-coupler method as a function of their composition. The refractive index of thin film zinc selenide alloys, determined from the measured effective indices of guided modes excited by a prism coupler, is shown to be reproducible and close to values measured for bulk material.
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