射频击穿中簇场蒸发的新机制

Z. Insepov, J. Norem, A. Hassanein
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引用次数: 19

摘要

研究了未来直线电机典型的高电场梯度引起“冷发射”的机理。通过分子动力学(MD)模拟了能够揭示温度效应的射频腔电极表面的纳米级铜尖的机理。该方法对相互作用粒子的运动方程进行数值求解,并采用适当的初始条件和边界条件。根据结果,高梯度射频腔内的真空应包含明显存在的纳米级块,这些块是由存在于真实腔表面的各种侵入物通过射频场蒸发而成的。在从室温到大块铜熔点的温度范围内,得到了临界电蒸发场。并将模拟结果与已有的直流电场作用下薄膜薄膜尖端断裂数据进行了比较。
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New mechanism of cluster field evaporation in rf breakdown
The mechanism of "cold-emission" caused by high electric field gradients typical of future linacs is studied. The mechanism was studied by molecular dynamics (MD) simulation of a nanoscale copper tip on a surface of an rf-cavity electrode that is capable of revealing temperature effects. In this MD method, the equations of motion of interacting particles are solved numerically and appropriate initial and boundary conditions are applied. According to the results, the vacuum inside the high-gradient rf cavity should contain a noticeable presence of nanometer-size chunks that evaporated from various intrusions that exist on the real cavity surface by an rf field. A critical electrical evaporation field was obtained for temperatures that range from room up to the melting point of bulk Cu. The simulation results were compared with available data on FIM tip fracture in a dc electric field.
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