用FLEX技术打印二进制掩模中的接触孔

Cheong Yew Shun, Ko Bong Sang, M.J. Bin Manaf, K. Ibrahim, Zahid Jamal
{"title":"用FLEX技术打印二进制掩模中的接触孔","authors":"Cheong Yew Shun, Ko Bong Sang, M.J. Bin Manaf, K. Ibrahim, Zahid Jamal","doi":"10.1109/SMELEC.2006.381098","DOIUrl":null,"url":null,"abstract":"The shrinking of contact opening is inevitable, as the technology progresses. The most obvious shrink strategies, wavelength reduction and phase-shifting masks (PSM) offer the most significant improvements to meet these demands, but at a hefty price. By using focus latitude exposure technique (FLEX) it is possible to print down contact hole with reasonable processing latitude using 248 nm wavelength lithography and binary mask. A few parameters were varied to obtain suitable condition. Several feature sizes were printed and measured to get the proper combination of the print bias and focal distances with acceptable process margin. Verification on production wafer is needed for different pitch of feature sizes and fine-tuning on the focal distance for optimum results.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Contact Hole Printing in Binary Mask by FLEX Technique\",\"authors\":\"Cheong Yew Shun, Ko Bong Sang, M.J. Bin Manaf, K. Ibrahim, Zahid Jamal\",\"doi\":\"10.1109/SMELEC.2006.381098\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The shrinking of contact opening is inevitable, as the technology progresses. The most obvious shrink strategies, wavelength reduction and phase-shifting masks (PSM) offer the most significant improvements to meet these demands, but at a hefty price. By using focus latitude exposure technique (FLEX) it is possible to print down contact hole with reasonable processing latitude using 248 nm wavelength lithography and binary mask. A few parameters were varied to obtain suitable condition. Several feature sizes were printed and measured to get the proper combination of the print bias and focal distances with acceptable process margin. Verification on production wafer is needed for different pitch of feature sizes and fine-tuning on the focal distance for optimum results.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.381098\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.381098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

随着技术的进步,触点开度的缩小是不可避免的。最明显的收缩策略,波长减少和相移掩模(PSM)提供了最显著的改进,以满足这些需求,但代价高昂。利用聚焦纬度曝光技术(FLEX),利用248nm波长光刻和二元掩模,可以在合理的加工纬度下打印接触孔。对几个参数进行了调整以获得合适的条件。打印和测量了几个特征尺寸,以获得打印偏差和焦距的适当组合,并具有可接受的工艺裕度。需要在生产硅片上验证不同间距的特征尺寸和微调焦距以获得最佳效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Contact Hole Printing in Binary Mask by FLEX Technique
The shrinking of contact opening is inevitable, as the technology progresses. The most obvious shrink strategies, wavelength reduction and phase-shifting masks (PSM) offer the most significant improvements to meet these demands, but at a hefty price. By using focus latitude exposure technique (FLEX) it is possible to print down contact hole with reasonable processing latitude using 248 nm wavelength lithography and binary mask. A few parameters were varied to obtain suitable condition. Several feature sizes were printed and measured to get the proper combination of the print bias and focal distances with acceptable process margin. Verification on production wafer is needed for different pitch of feature sizes and fine-tuning on the focal distance for optimum results.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Synchrotron Radiation X-ray Diffraction and X-ray Photoelectron Spectroscopy Investigation on Si-based Structures for Sub-Micron Si-IC Applications Device Design Consideration for Nanoscale MOSFET Using Semiconductor TCAD Tools The Effect of Al and Pt/Ti Simultaneously Annealing on Electrical Characteristics of n-GaN Schottky Diode A Low-Cost CMOS Reconfigurable Receiver for WiMAX Applications Contact Hole Printing in Binary Mask by FLEX Technique
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1