{"title":"采用SiGe HBT技术的低噪声、高增益宽带放大器","authors":"R. Chan, M. Feng","doi":"10.1109/MWSYM.2004.1335786","DOIUrl":null,"url":null,"abstract":"A low noise wideband amplifier using SiGe HBT technology for the receiver system-on-a-chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of 5 dB, and output third-order intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.","PeriodicalId":334675,"journal":{"name":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Low noise, and high gain wideband amplifier using SiGe HBT technology\",\"authors\":\"R. Chan, M. Feng\",\"doi\":\"10.1109/MWSYM.2004.1335786\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low noise wideband amplifier using SiGe HBT technology for the receiver system-on-a-chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of 5 dB, and output third-order intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.\",\"PeriodicalId\":334675,\"journal\":{\"name\":\"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2004.1335786\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2004.1335786","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low noise, and high gain wideband amplifier using SiGe HBT technology
A low noise wideband amplifier using SiGe HBT technology for the receiver system-on-a-chip application is reported. The fabricated amplifier chip has a gain of 15 dB across 22 GHz bandwidth, noise figure of 5 dB, and output third-order intermodulation product (OIP3) of 16.5 dBm, while dissipating a dc power of 72 mW for the operation. Measured high frequency, noise and linearity performances are compared with Cadence's Spectre's simulation with layout parasitics. Excellent agreement is observed for ultra-low power amplifier's measured and simulated results.
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