M. Otsuki, S. Momota, M. Kirisawa, H. Wakimoto, Y. Seki
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引用次数: 1
摘要
介绍了采用新开发的非自对准浅p井成井技术制备平面栅igbt的实验结果。600 V/100 A NPT-IGBT的导通电压降约为1.7 V，与传统器件相比降低了0.4 V以上。在没有外部限流功能的情况下，平均抗短路能力约为30 /spl mu/sec。
Evaluation of 600 V/100 A NPT-IGBT with a non-self-align shallow p-well formation techniques
Experimental results of planer gate IGBTs fabricated with newly developed a non-self-align shallow p-well formation technique are presented. The 600 V/100 A NPT-IGBT shows the on-state voltage drop of about 1.7 V, which is more than 0.4 V reduction compared to the conventional devices. The average short circuit withstand capability of about 30 /spl mu/sec was obtained without external current limiting functions.
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