{"title":"高频区A3B5氮化物的电导截止","authors":"K. Kulikov, I. Baida, V. Moskaliuk, V. Timofeyev","doi":"10.1109/ELNANO.2018.8477497","DOIUrl":null,"url":null,"abstract":"In this article high-frequency cutoff of Fourier spectrum pulse response for drift speed of gallium nitride is investigated. The resulting cutoff frequencies are compared with frequency-domain limits of negative dynamic conductance. The proposed method is based on solution of differential equation system which consists of relaxation expressions for energy, impulse and concentration. Relaxation times used for various kinds of scattering are considered.","PeriodicalId":269665,"journal":{"name":"2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Conductance Cutoff of A3B5 Nitrides at High-Frequency Region\",\"authors\":\"K. Kulikov, I. Baida, V. Moskaliuk, V. Timofeyev\",\"doi\":\"10.1109/ELNANO.2018.8477497\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this article high-frequency cutoff of Fourier spectrum pulse response for drift speed of gallium nitride is investigated. The resulting cutoff frequencies are compared with frequency-domain limits of negative dynamic conductance. The proposed method is based on solution of differential equation system which consists of relaxation expressions for energy, impulse and concentration. Relaxation times used for various kinds of scattering are considered.\",\"PeriodicalId\":269665,\"journal\":{\"name\":\"2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELNANO.2018.8477497\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELNANO.2018.8477497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Conductance Cutoff of A3B5 Nitrides at High-Frequency Region
In this article high-frequency cutoff of Fourier spectrum pulse response for drift speed of gallium nitride is investigated. The resulting cutoff frequencies are compared with frequency-domain limits of negative dynamic conductance. The proposed method is based on solution of differential equation system which consists of relaxation expressions for energy, impulse and concentration. Relaxation times used for various kinds of scattering are considered.
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