超低功耗应用中器件/电路协同方案的优化设计

T. Hiramoto
{"title":"超低功耗应用中器件/电路协同方案的优化设计","authors":"T. Hiramoto","doi":"10.1109/ICCDCS.2002.1004066","DOIUrl":null,"url":null,"abstract":"The miniaturization of MOS transistors has been the only guideline for device design for high performance VLSIs. Approaching to the fundamental scaling limit, various critical issues have arisen in sub-100 nm CMOS devices such as the increase in power dissipation and device degradation due to short channel effects. In order to solve these problems and go into the deep sub-100 nm regime, new device design guidelines should be developed. In this paper, cooperation between device and circuit is proposed for ultra-low power applications. The optimum design in low power circuit schemes is discussed from the device point of view, especially for the suppression of stand-by power.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"20 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimum design of device/circuit cooperative schemes for ultra-low power applications\",\"authors\":\"T. Hiramoto\",\"doi\":\"10.1109/ICCDCS.2002.1004066\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The miniaturization of MOS transistors has been the only guideline for device design for high performance VLSIs. Approaching to the fundamental scaling limit, various critical issues have arisen in sub-100 nm CMOS devices such as the increase in power dissipation and device degradation due to short channel effects. In order to solve these problems and go into the deep sub-100 nm regime, new device design guidelines should be developed. In this paper, cooperation between device and circuit is proposed for ultra-low power applications. The optimum design in low power circuit schemes is discussed from the device point of view, especially for the suppression of stand-by power.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"20 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004066\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004066","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

MOS晶体管的小型化已成为高性能超大规模集成电路器件设计的唯一准则。在接近基本的缩放极限时,在100纳米以下的CMOS器件中出现了各种关键问题,例如由于短通道效应导致的功耗增加和器件退化。为了解决这些问题并进入100纳米以下的深度,应该制定新的器件设计指南。本文提出了超低功耗应用中器件与电路之间的协作。从器件的角度讨论了低功耗电路方案的优化设计,特别是对待机功率的抑制。
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Optimum design of device/circuit cooperative schemes for ultra-low power applications
The miniaturization of MOS transistors has been the only guideline for device design for high performance VLSIs. Approaching to the fundamental scaling limit, various critical issues have arisen in sub-100 nm CMOS devices such as the increase in power dissipation and device degradation due to short channel effects. In order to solve these problems and go into the deep sub-100 nm regime, new device design guidelines should be developed. In this paper, cooperation between device and circuit is proposed for ultra-low power applications. The optimum design in low power circuit schemes is discussed from the device point of view, especially for the suppression of stand-by power.
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