{"title":"氧化物植入VCSELs的寄生特性及设计考虑","authors":"C. Chang, L. Chrostowski, C. Chang-Hasnain","doi":"10.1109/ISLC.2000.882305","DOIUrl":null,"url":null,"abstract":"VCSELs are promising high-speed transmitters in lightwave communication systems. Two major device structures used today are oxide-confined and proton-implanted VCSELs. The former has a high capacitance due to the thin oxide layer, whereas the latter has a high resistance due to a small injection area. Oxide plus implant VCSELs was demonstrated to have >20 GHz modulation bandwidth. However, the design rule and trade-off on oxide and implant dimensions and their impact on VCSEL's modulation response have not been clearly shown. In the paper, we fabricated VCSELs of oxide-only and oxide-implant structures on the same sample and show that, conclusively and quantitatively, the additional implant process increases VCSEL modulation speed. A model is proposed to design high-speed VCSELs by removing the parasitic limitation.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"207 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Parasitics and design considerations on oxide-implant VCSELs\",\"authors\":\"C. Chang, L. Chrostowski, C. Chang-Hasnain\",\"doi\":\"10.1109/ISLC.2000.882305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"VCSELs are promising high-speed transmitters in lightwave communication systems. Two major device structures used today are oxide-confined and proton-implanted VCSELs. The former has a high capacitance due to the thin oxide layer, whereas the latter has a high resistance due to a small injection area. Oxide plus implant VCSELs was demonstrated to have >20 GHz modulation bandwidth. However, the design rule and trade-off on oxide and implant dimensions and their impact on VCSEL's modulation response have not been clearly shown. In the paper, we fabricated VCSELs of oxide-only and oxide-implant structures on the same sample and show that, conclusively and quantitatively, the additional implant process increases VCSEL modulation speed. A model is proposed to design high-speed VCSELs by removing the parasitic limitation.\",\"PeriodicalId\":322366,\"journal\":{\"name\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"volume\":\"207 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2000.882305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Parasitics and design considerations on oxide-implant VCSELs
VCSELs are promising high-speed transmitters in lightwave communication systems. Two major device structures used today are oxide-confined and proton-implanted VCSELs. The former has a high capacitance due to the thin oxide layer, whereas the latter has a high resistance due to a small injection area. Oxide plus implant VCSELs was demonstrated to have >20 GHz modulation bandwidth. However, the design rule and trade-off on oxide and implant dimensions and their impact on VCSEL's modulation response have not been clearly shown. In the paper, we fabricated VCSELs of oxide-only and oxide-implant structures on the same sample and show that, conclusively and quantitatively, the additional implant process increases VCSEL modulation speed. A model is proposed to design high-speed VCSELs by removing the parasitic limitation.
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