Y. Kim, Jeonghu Han, Dongho Lee, Changkun Park, Songcheol Hong
{"title":"用于超高频RFID阅读器的CMOS功率放大器","authors":"Y. Kim, Jeonghu Han, Dongho Lee, Changkun Park, Songcheol Hong","doi":"10.1109/APMC.2006.4429395","DOIUrl":null,"url":null,"abstract":"A CMOS power amplifier for an RFID reader, which is implemented in a 0.18 mum CMOS process, is designed on a system IC, including output matching circuits. The developed amplifier has an efficiency of 27 % at 900 MHz and an output power of 24 dBm with a supply voltage of 1.8 V. In addition, it is isolated with shielding metal lines and is ESD protected. Furthermore, it is robust to high supply voltages and load impedance variations.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A CMOS power amplifier for a UHF RFID reader\",\"authors\":\"Y. Kim, Jeonghu Han, Dongho Lee, Changkun Park, Songcheol Hong\",\"doi\":\"10.1109/APMC.2006.4429395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS power amplifier for an RFID reader, which is implemented in a 0.18 mum CMOS process, is designed on a system IC, including output matching circuits. The developed amplifier has an efficiency of 27 % at 900 MHz and an output power of 24 dBm with a supply voltage of 1.8 V. In addition, it is isolated with shielding metal lines and is ESD protected. Furthermore, it is robust to high supply voltages and load impedance variations.\",\"PeriodicalId\":137931,\"journal\":{\"name\":\"2006 Asia-Pacific Microwave Conference\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 Asia-Pacific Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC.2006.4429395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 Asia-Pacific Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC.2006.4429395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
在系统集成电路上设计了一种用于RFID读写器的CMOS功率放大器,该放大器采用0.18 μ m CMOS工艺实现,包括输出匹配电路。所开发的放大器在900 MHz时效率为27%,在1.8 V电源电压下输出功率为24 dBm。此外,它与屏蔽金属线隔离,并具有ESD保护。此外,它对高电源电压和负载阻抗变化具有鲁棒性。
A CMOS power amplifier for an RFID reader, which is implemented in a 0.18 mum CMOS process, is designed on a system IC, including output matching circuits. The developed amplifier has an efficiency of 27 % at 900 MHz and an output power of 24 dBm with a supply voltage of 1.8 V. In addition, it is isolated with shielding metal lines and is ESD protected. Furthermore, it is robust to high supply voltages and load impedance variations.