Seungsik Lee, B. Park, Seunghyun Jang, Sangsung Choi
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The Comparison of T/RX Switch Performance for UWB Communication
This paper compares performance of three transmitter/receiver (T/RX) switch structures, which can be included as UWB RF transceiver. They are designed using complementary metal-oxide semiconductor (CMOS) 0.13 um technology and simulated each structure. They can be operated from 3 to 5 GHz and package model are applied for chip on board(COB) test. They have 1.8 dB insertion loss and more than 30 dB isolation at 5 GHz.
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