{"title":"用于片上DC/DC转换器的低压CMOS兼容功率MOSFET","authors":"S. Nassif-Khalil, S. Honarkhah, C. Salama","doi":"10.1109/ISPSD.2000.856769","DOIUrl":null,"url":null,"abstract":"1 A lateral Power MOSFET switch, implemented in a 0.25 /spl mu/m-5 metal CMOS process and suitable for high-frequency switch mode on-chip DC/DC converters is described in this paper. The fabricated device has an active chip area of 130 /spl mu/m/spl times/130 /spl mu/m and exhibits an on-resistance of 40.37 m/spl Omega/ (a specific on-resistance of 6.82 /spl mu//spl Omega/cm/sup 2/) and a total gate charge of 0.105 nC at V/sub GS/=3.3 V.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters\",\"authors\":\"S. Nassif-Khalil, S. Honarkhah, C. Salama\",\"doi\":\"10.1109/ISPSD.2000.856769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"1 A lateral Power MOSFET switch, implemented in a 0.25 /spl mu/m-5 metal CMOS process and suitable for high-frequency switch mode on-chip DC/DC converters is described in this paper. The fabricated device has an active chip area of 130 /spl mu/m/spl times/130 /spl mu/m and exhibits an on-resistance of 40.37 m/spl Omega/ (a specific on-resistance of 6.82 /spl mu//spl Omega/cm/sup 2/) and a total gate charge of 0.105 nC at V/sub GS/=3.3 V.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856769\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters
1 A lateral Power MOSFET switch, implemented in a 0.25 /spl mu/m-5 metal CMOS process and suitable for high-frequency switch mode on-chip DC/DC converters is described in this paper. The fabricated device has an active chip area of 130 /spl mu/m/spl times/130 /spl mu/m and exhibits an on-resistance of 40.37 m/spl Omega/ (a specific on-resistance of 6.82 /spl mu//spl Omega/cm/sup 2/) and a total gate charge of 0.105 nC at V/sub GS/=3.3 V.
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