M. Aust, H. Wang, R. Carandang, K. Tan, C.H. Chen, T. Trinh, R. Esfandiari, H. Yen
{"title":"q波段相控阵应用的GaAs单片元件开发","authors":"M. Aust, H. Wang, R. Carandang, K. Tan, C.H. Chen, T. Trinh, R. Esfandiari, H. Yen","doi":"10.1109/MWSYM.1992.188081","DOIUrl":null,"url":null,"abstract":"Major components for monolithic Q-band phased-array applications have been developed using 0.2 mu m doped channel pseudomorphic InGaAs/GaAs high electron mobility transistor (HEMT) technology. The components include a high-gain, high-efficiency monolithic amplifier and a 3-bit switched line, monolithic phase shifter. At 44 GHz, measurement results of the amplifier demonstrated a small signal gain of 19.5 dB, and a power added efficiency of 20% at 3-dB compression point with an output power of 9 mW. The phase shifter had a measured insertion loss of 7.5 dB and a phase error smaller than 7 degrees from 43 to 45 GHz for all phase states. These components are suitable for monolithic integrated phased-array transmitter applications.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"252 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"GaAs monolithic components development for Q-band phased array application\",\"authors\":\"M. Aust, H. Wang, R. Carandang, K. Tan, C.H. Chen, T. Trinh, R. Esfandiari, H. Yen\",\"doi\":\"10.1109/MWSYM.1992.188081\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Major components for monolithic Q-band phased-array applications have been developed using 0.2 mu m doped channel pseudomorphic InGaAs/GaAs high electron mobility transistor (HEMT) technology. The components include a high-gain, high-efficiency monolithic amplifier and a 3-bit switched line, monolithic phase shifter. At 44 GHz, measurement results of the amplifier demonstrated a small signal gain of 19.5 dB, and a power added efficiency of 20% at 3-dB compression point with an output power of 9 mW. The phase shifter had a measured insertion loss of 7.5 dB and a phase error smaller than 7 degrees from 43 to 45 GHz for all phase states. These components are suitable for monolithic integrated phased-array transmitter applications.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"252 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188081\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188081","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs monolithic components development for Q-band phased array application
Major components for monolithic Q-band phased-array applications have been developed using 0.2 mu m doped channel pseudomorphic InGaAs/GaAs high electron mobility transistor (HEMT) technology. The components include a high-gain, high-efficiency monolithic amplifier and a 3-bit switched line, monolithic phase shifter. At 44 GHz, measurement results of the amplifier demonstrated a small signal gain of 19.5 dB, and a power added efficiency of 20% at 3-dB compression point with an output power of 9 mW. The phase shifter had a measured insertion loss of 7.5 dB and a phase error smaller than 7 degrees from 43 to 45 GHz for all phase states. These components are suitable for monolithic integrated phased-array transmitter applications.<>
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