{"title":"超越千年虫:技术融合作为未来低压电源管理半导体的驱动因素","authors":"R.K. Williams","doi":"10.1109/ISPSD.2000.856764","DOIUrl":null,"url":null,"abstract":"Convergence of computing consumer, and communication products into multifunction portables (e.g. Internet cell phones) is driving today's electronics toward a unified chip set concept sharing common power architectures. These converging specifications allow analog and power management ICs and discretes to migrate into older mid-to-deep submicron DRAM fabs, enjoying significant chip shrinks, speed increases, switch resistance reduction, higher functionality and lower manufacturing costs. Low thermal budget processes, CMP, 3D structures, ultra-shallow junctions and planarized interconnects are promising and beneficial byproducts of this evolution. The world's first production 45 Mcell/cm/sup 2/ (287 Mcell/in/sup 2/) vertical 30 V power TrenchDMOS is illustrative of technology convergence in power management semiconductors.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"Beyond Y2K: technology convergence as a driver of future low-voltage power management semiconductors\",\"authors\":\"R.K. Williams\",\"doi\":\"10.1109/ISPSD.2000.856764\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Convergence of computing consumer, and communication products into multifunction portables (e.g. Internet cell phones) is driving today's electronics toward a unified chip set concept sharing common power architectures. These converging specifications allow analog and power management ICs and discretes to migrate into older mid-to-deep submicron DRAM fabs, enjoying significant chip shrinks, speed increases, switch resistance reduction, higher functionality and lower manufacturing costs. Low thermal budget processes, CMP, 3D structures, ultra-shallow junctions and planarized interconnects are promising and beneficial byproducts of this evolution. The world's first production 45 Mcell/cm/sup 2/ (287 Mcell/in/sup 2/) vertical 30 V power TrenchDMOS is illustrative of technology convergence in power management semiconductors.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856764\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856764","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Beyond Y2K: technology convergence as a driver of future low-voltage power management semiconductors
Convergence of computing consumer, and communication products into multifunction portables (e.g. Internet cell phones) is driving today's electronics toward a unified chip set concept sharing common power architectures. These converging specifications allow analog and power management ICs and discretes to migrate into older mid-to-deep submicron DRAM fabs, enjoying significant chip shrinks, speed increases, switch resistance reduction, higher functionality and lower manufacturing costs. Low thermal budget processes, CMP, 3D structures, ultra-shallow junctions and planarized interconnects are promising and beneficial byproducts of this evolution. The world's first production 45 Mcell/cm/sup 2/ (287 Mcell/in/sup 2/) vertical 30 V power TrenchDMOS is illustrative of technology convergence in power management semiconductors.