顺序掺磷硅沟槽场极板功率mosfet的工艺优化

2020 International Symposium on Semiconductor Manufacturing (ISSM) Pub Date : 2020-12-15 DOI:10.1109/ISSM51728.2020.9377528

K. Tomita, T. Shiraishi, Hiroaki Kato, Hiroyuki Kishimoto, K. Miyashita, Kenya Kobayashi

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引用次数: 0

摘要

序贯磷掺杂工艺有望在窄深沟槽中形成像样的硅电极。我们对顺序掺磷硅的fp - mosfet进行了工艺优化。我们通过不经活化退火处理掺磷硅，成功地减少了场片的加工变化和晶圆翘曲。此外，在1000°C退火之前插入800°C退火有助于硅场板无空洞。

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Process Optimization of Trench Field Plate Power MOSFETs with Sequential Phosphorus-Doped Silicon

Sequential phosphorus doping process is expected to form decent silicon electrodes in narrow and deep trenches. We performed process optimization of FP-MOSFETs with sequential phosphorus-doped silicon. We succeeded in reducing processing variations in field plates and decreasing wafer warpage by processing phosphorus-doped silicon without activation annealing. In addition, inserting 800°C annealing before 1000°C annealing contributes no voids in silicon field plates.

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2020 International Symposium on Semiconductor Manufacturing (ISSM)

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