{"title":"1.5 v线性CMOS OTA与-60dB IM3高频应用","authors":"Tien-Yu Lo, C. Hung","doi":"10.1109/ASSCC.2006.357877","DOIUrl":null,"url":null,"abstract":"A novel configuration of linearized Operational Transconductance Amplifier (OTA) for low-voltage and high frequency applications is proposed. By using double differential pairs and the source degeneration structure under nano-scale CMOS technology, the nonlinearity caused by short channel effect from small feature size can be minimized. A robust common-mode control system is designed for input and output common-mode stability, and thus reduces distortion caused by common-mode voltage variation. Tuning ability can be achieved by using MOS transistors in the linear region. The linearity of the OTA is about -60dB third-order inter- modulation (IM3) distortion for up to 0.9 VPP at 40 MHz. Ths OTA was fabricated by the TSMC 180-nm Deep N-WELL CMOS process. It occupies a small area of 15.1 x 10-3 mm2 and the power consumption is 9.5 mW under a 1.5-V supply voltage.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"1.5-V Linear CMOS OTA with -60dB IM3 for High Frequency Applications\",\"authors\":\"Tien-Yu Lo, C. Hung\",\"doi\":\"10.1109/ASSCC.2006.357877\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel configuration of linearized Operational Transconductance Amplifier (OTA) for low-voltage and high frequency applications is proposed. By using double differential pairs and the source degeneration structure under nano-scale CMOS technology, the nonlinearity caused by short channel effect from small feature size can be minimized. A robust common-mode control system is designed for input and output common-mode stability, and thus reduces distortion caused by common-mode voltage variation. Tuning ability can be achieved by using MOS transistors in the linear region. The linearity of the OTA is about -60dB third-order inter- modulation (IM3) distortion for up to 0.9 VPP at 40 MHz. Ths OTA was fabricated by the TSMC 180-nm Deep N-WELL CMOS process. It occupies a small area of 15.1 x 10-3 mm2 and the power consumption is 9.5 mW under a 1.5-V supply voltage.\",\"PeriodicalId\":142478,\"journal\":{\"name\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"61 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2006.357877\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357877","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1.5-V Linear CMOS OTA with -60dB IM3 for High Frequency Applications
A novel configuration of linearized Operational Transconductance Amplifier (OTA) for low-voltage and high frequency applications is proposed. By using double differential pairs and the source degeneration structure under nano-scale CMOS technology, the nonlinearity caused by short channel effect from small feature size can be minimized. A robust common-mode control system is designed for input and output common-mode stability, and thus reduces distortion caused by common-mode voltage variation. Tuning ability can be achieved by using MOS transistors in the linear region. The linearity of the OTA is about -60dB third-order inter- modulation (IM3) distortion for up to 0.9 VPP at 40 MHz. Ths OTA was fabricated by the TSMC 180-nm Deep N-WELL CMOS process. It occupies a small area of 15.1 x 10-3 mm2 and the power consumption is 9.5 mW under a 1.5-V supply voltage.