{"title":"微电路中的单事件功能中断(SEFI)灵敏度","authors":"R. Koga, S. Penzin, K. Crawford, W. Crain","doi":"10.1109/RADECS.1997.698915","DOIUrl":null,"url":null,"abstract":"The single event functional interrupt (SEFI) sensitivity of several types of microcircuits is measured with heavy ions. While simple microcircuits have not been affected by SEFI, many complex microcircuits are vulnerable to it in varying degrees. Although there are many causes for SEFIs, ion irradiation testing in conjunction with an understanding of device architecture helps refine techniques which can be used to lessen the ill effects caused by SEFI.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"75","resultStr":"{\"title\":\"Single event functional interrupt (SEFI) sensitivity in microcircuits\",\"authors\":\"R. Koga, S. Penzin, K. Crawford, W. Crain\",\"doi\":\"10.1109/RADECS.1997.698915\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The single event functional interrupt (SEFI) sensitivity of several types of microcircuits is measured with heavy ions. While simple microcircuits have not been affected by SEFI, many complex microcircuits are vulnerable to it in varying degrees. Although there are many causes for SEFIs, ion irradiation testing in conjunction with an understanding of device architecture helps refine techniques which can be used to lessen the ill effects caused by SEFI.\",\"PeriodicalId\":106774,\"journal\":{\"name\":\"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"75\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS.1997.698915\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1997.698915","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Single event functional interrupt (SEFI) sensitivity in microcircuits
The single event functional interrupt (SEFI) sensitivity of several types of microcircuits is measured with heavy ions. While simple microcircuits have not been affected by SEFI, many complex microcircuits are vulnerable to it in varying degrees. Although there are many causes for SEFIs, ion irradiation testing in conjunction with an understanding of device architecture helps refine techniques which can be used to lessen the ill effects caused by SEFI.
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