以AlxGa1−xAs为异质结,复合薄层,用于生物传感器的晶体硅太阳能电池设计

Syam Erast Prayoga, R. W. Purnamaningsih, T. Abuzairi, N. R. Poespawati
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引用次数: 1

摘要

太阳能电池经历了许多发展阶段。硅是制造太阳能电池的重要材料之一。硅太阳电池高效率的应用之一是与本征薄层(HIT)晶体硅的异质结。硅太阳能电池应用的另一种替代方案是与化合物薄层(HCT)晶体硅太阳能电池的异质结,其中硅与III-V化合物半导体耦合。n-AlGaAs被用作化合物薄层晶体硅太阳电池异质结上n-AlAs的替代品。与AlAs相比,AlGaAs的晶格常数更适合于硅。为了提高太阳能电池的效率,对前表面的AlxGa1−xAs层采用了阶梯分级法。采用wxAMPS软件作为仿真工具,对阶跃分级AlxGa1−xAs层进行优化。仿真结果表明,HCT晶体硅太阳能电池的短路电流密度(Jsc)为16.64 mA/cm2,开路电压(Voc)为1.05 V,填充系数为0.95,效率为16.64%。它产生的能量可以用作HGM-111生物传感器的电源。
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Crystalline silicon solar cell design with AlxGa1−xAs as heterojunction with compound thin layer for biosensor application
Solar cells have been through many development phases. Silicon is a one of many important materials in solar cell manufacturing. One of silicon solar cell applications which can produce high efficiency is Heterojunction with Intrinsic Thin-layer (HIT) crystalline silicon solar cell. Another alternative of silicon solar cell applications is Heterojunction with Compound Thin-layer (HCT) crystalline silicon solar cell where silicon is coupled with III-V compound semiconductor. n-AlGaAs is used as an alternative from n-AlAs on Heterojunction with Compound Thin-layer crystalline silicon solar cell. Compared to AlAs, lattice constant of AlGaAs is more suitable to the silicon. To increase the efficiency of solar cell the step grading method is used for AlxGa1−xAs layer on the front surface. The optimization of step grading AlxGa1−xAs layer was done by using the wxAMPS software as simulation tool. Simulation results show that HCT crystalline silicon solar cell produce the 16.64 mA/cm2 short circuit current density (Jsc), the 1.05 V open circuit voltage (Voc), the 0.95 fill factor, and the 16.64% efficiency. The power it produces can be used as power source for HGM-111 biosensors.
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