{"title":"2Xnm NAND闪存循环间隔时间效应的新HTDR现象研究","authors":"Huang Chia-Sheng, R. Ogino","doi":"10.1109/IPFA.2018.8452599","DOIUrl":null,"url":null,"abstract":"In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect\",\"authors\":\"Huang Chia-Sheng, R. Ogino\",\"doi\":\"10.1109/IPFA.2018.8452599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect
In this paper, we explored the 2Xnm NAND Flash relationship between HTDR (High temperature data retention) and Pre-cycling conditions in detail. The Pre-cycling interval time effect, no matter in 4Xnm or 2Xnm NAND Flash is play different roles. Finally, based on experimental data we also explored related analyses and discussions of the physical mechanisms.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
