{"title":"主动磁场抵消系统","authors":"Weiyang Sun, Feng-Chang Chuang, Yu-Lin Song, Chwen Yu, T. Ma, Tzong-Lin Wu, Luh-Maan Chang","doi":"10.1109/EMCCOMPO.2013.6735184","DOIUrl":null,"url":null,"abstract":"The extremely low frequency (ELF) magnetic field has significant impact on yield rate especially when the processing reaches less than 14 nanometer in next-generation nano-Fab. For sensitive equipments such as the SEMs, TEMs, STEMs, FIB writers, and E-beam writers, it suggests that the ELF magnetic field should be lower than 0.5 milli-Gauss to guarantee good yield. Therefore, mitigating the magnetic field by active/passive approaches such as the material shielding, wire permutation, and active canceling are highly demanded.","PeriodicalId":302757,"journal":{"name":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","volume":"155 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Active magnetic field canceling system\",\"authors\":\"Weiyang Sun, Feng-Chang Chuang, Yu-Lin Song, Chwen Yu, T. Ma, Tzong-Lin Wu, Luh-Maan Chang\",\"doi\":\"10.1109/EMCCOMPO.2013.6735184\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The extremely low frequency (ELF) magnetic field has significant impact on yield rate especially when the processing reaches less than 14 nanometer in next-generation nano-Fab. For sensitive equipments such as the SEMs, TEMs, STEMs, FIB writers, and E-beam writers, it suggests that the ELF magnetic field should be lower than 0.5 milli-Gauss to guarantee good yield. Therefore, mitigating the magnetic field by active/passive approaches such as the material shielding, wire permutation, and active canceling are highly demanded.\",\"PeriodicalId\":302757,\"journal\":{\"name\":\"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)\",\"volume\":\"155 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMCCOMPO.2013.6735184\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 9th International Workshop on Electromagnetic Compatibility of Integrated Circuits (EMC Compo)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCCOMPO.2013.6735184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
摘要
在新一代纳米晶圆厂中，极低频磁场对成品率有显著影响，特别是当加工深度小于14纳米时。对于sem, tem, stem, FIB写入器和电子束写入器等敏感设备，建议极低频磁场应低于0.5毫高斯以保证良好的良率。因此，迫切需要通过材料屏蔽、导线排列和有源抵消等有源/无源方法来减轻磁场。
The extremely low frequency (ELF) magnetic field has significant impact on yield rate especially when the processing reaches less than 14 nanometer in next-generation nano-Fab. For sensitive equipments such as the SEMs, TEMs, STEMs, FIB writers, and E-beam writers, it suggests that the ELF magnetic field should be lower than 0.5 milli-Gauss to guarantee good yield. Therefore, mitigating the magnetic field by active/passive approaches such as the material shielding, wire permutation, and active canceling are highly demanded.
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