基于激光探头的CMOS VLSI逻辑失效分析

F. Henley
{"title":"基于激光探头的CMOS VLSI逻辑失效分析","authors":"F. Henley","doi":"10.1109/IRPS.1984.362022","DOIUrl":null,"url":null,"abstract":"An improved technique for using a focused laser beam to extract logical levels of internal IC transistors in a non-contact and non-destructive manner is introduced and described. Advances in the detection scheme coupled with computer control and signal processing allow automated operation. Various tests were performed on CMOS microprocessors to exemplify the frequency, noise, and drift insensitivity of the detection scheme. These results will be presented, along with a discussion on the practical use of the technique and its extension for testing NMOS and bipolar technologies.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"158 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Logic Failure Analysis of CMOS VLSI using a Laser Probe\",\"authors\":\"F. Henley\",\"doi\":\"10.1109/IRPS.1984.362022\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An improved technique for using a focused laser beam to extract logical levels of internal IC transistors in a non-contact and non-destructive manner is introduced and described. Advances in the detection scheme coupled with computer control and signal processing allow automated operation. Various tests were performed on CMOS microprocessors to exemplify the frequency, noise, and drift insensitivity of the detection scheme. These results will be presented, along with a discussion on the practical use of the technique and its extension for testing NMOS and bipolar technologies.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"158 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362022\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362022","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

摘要

介绍并描述了一种改进的技术,用于使用聚焦激光束以非接触和非破坏性的方式提取内部IC晶体管的逻辑电平。先进的检测方案加上计算机控制和信号处理允许自动化操作。在CMOS微处理器上进行了各种测试,以举例说明检测方案的频率、噪声和漂移不灵敏度。将介绍这些结果,并讨论该技术的实际应用及其在测试NMOS和双极技术方面的扩展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Logic Failure Analysis of CMOS VLSI using a Laser Probe
An improved technique for using a focused laser beam to extract logical levels of internal IC transistors in a non-contact and non-destructive manner is introduced and described. Advances in the detection scheme coupled with computer control and signal processing allow automated operation. Various tests were performed on CMOS microprocessors to exemplify the frequency, noise, and drift insensitivity of the detection scheme. These results will be presented, along with a discussion on the practical use of the technique and its extension for testing NMOS and bipolar technologies.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Electromigration Study of the Al-Cu/Ti/Al-Cu System Lifetime of Bonded Contacts on Thin Film Metallizations Characteristics & Reliability of 100Å Oxides Epoxy Degradation Induced Au-Al Intermetallic Void Formation in Plastic Encapsulated MOS Memories Sputtered Ti-Doped Al-Si for Enhanced Interconnect Reliability
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1