{"title":"面向设计的之字形半导体管场效应管紧凑模型分析","authors":"Sudipta Bardhan, H. Rahaman","doi":"10.1109/ICECI.2014.6767384","DOIUrl":null,"url":null,"abstract":"This paper presents a compact, semiconducting behavior zigzag model of carbon nanotube field effect transistor. The model is based on analytical approximations. We have done the performance analysis of the developed model and the comparisons of the performance parameter like surface potential, drain current, quantum capacitance, average velocity against chirality of zigzag CNTFET model using numerical calculations.","PeriodicalId":315219,"journal":{"name":"International Conference on Electronics, Communication and Instrumentation (ICECI)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of design-oriented compact model for zigzag semiconducting CNTFETs\",\"authors\":\"Sudipta Bardhan, H. Rahaman\",\"doi\":\"10.1109/ICECI.2014.6767384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a compact, semiconducting behavior zigzag model of carbon nanotube field effect transistor. The model is based on analytical approximations. We have done the performance analysis of the developed model and the comparisons of the performance parameter like surface potential, drain current, quantum capacitance, average velocity against chirality of zigzag CNTFET model using numerical calculations.\",\"PeriodicalId\":315219,\"journal\":{\"name\":\"International Conference on Electronics, Communication and Instrumentation (ICECI)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Electronics, Communication and Instrumentation (ICECI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECI.2014.6767384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Electronics, Communication and Instrumentation (ICECI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECI.2014.6767384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis of design-oriented compact model for zigzag semiconducting CNTFETs
This paper presents a compact, semiconducting behavior zigzag model of carbon nanotube field effect transistor. The model is based on analytical approximations. We have done the performance analysis of the developed model and the comparisons of the performance parameter like surface potential, drain current, quantum capacitance, average velocity against chirality of zigzag CNTFET model using numerical calculations.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
