{"title":"InGaAs/InAsSb应变层超晶格红外探测器","authors":"G. Ariyawansa, J. Duran, C. Reyner, J. Scheihing","doi":"10.1109/rapid.2019.8864392","DOIUrl":null,"url":null,"abstract":"This work presents III-V strained layer superlattice (SLS) detectors with an emphasis on InGaAs/InAsSb SLS designs. Compared to conventional InAs/In(Ga)Sb and InAs/InAsSb designs, InGaAs/InAsSb enables a wider design space for performance improvements. Various SLS designs and experimental results are provided and discussed.","PeriodicalId":143675,"journal":{"name":"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InGaAs/InAsSb Strained Layer Superlattice Infrared Detectors\",\"authors\":\"G. Ariyawansa, J. Duran, C. Reyner, J. Scheihing\",\"doi\":\"10.1109/rapid.2019.8864392\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents III-V strained layer superlattice (SLS) detectors with an emphasis on InGaAs/InAsSb SLS designs. Compared to conventional InAs/In(Ga)Sb and InAs/InAsSb designs, InGaAs/InAsSb enables a wider design space for performance improvements. Various SLS designs and experimental results are provided and discussed.\",\"PeriodicalId\":143675,\"journal\":{\"name\":\"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/rapid.2019.8864392\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/rapid.2019.8864392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This work presents III-V strained layer superlattice (SLS) detectors with an emphasis on InGaAs/InAsSb SLS designs. Compared to conventional InAs/In(Ga)Sb and InAs/InAsSb designs, InGaAs/InAsSb enables a wider design space for performance improvements. Various SLS designs and experimental results are provided and discussed.