{"title":"对称性对石墨烯双点电导的影响","authors":"P. Marconcini","doi":"10.1109/NANO.2013.6721038","DOIUrl":null,"url":null,"abstract":"We numerically study the transport behavior of a graphene cavity delimited by two constrictions and divided into two dots by the tunnel barrier induced by the electrostatic action of a negatively biased gate. Performing an analysis, based on an envelope function approach, of the dependence of the conductance on the position of the tunnel barrier, we observe a maximum when the barrier is at the middle of the cavity, an effect similar, even though less pronounced, to that recently studied in devices based on semiconductor heterostructures.","PeriodicalId":189707,"journal":{"name":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of symmetry on the conductance of a graphene double dot\",\"authors\":\"P. Marconcini\",\"doi\":\"10.1109/NANO.2013.6721038\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We numerically study the transport behavior of a graphene cavity delimited by two constrictions and divided into two dots by the tunnel barrier induced by the electrostatic action of a negatively biased gate. Performing an analysis, based on an envelope function approach, of the dependence of the conductance on the position of the tunnel barrier, we observe a maximum when the barrier is at the middle of the cavity, an effect similar, even though less pronounced, to that recently studied in devices based on semiconductor heterostructures.\",\"PeriodicalId\":189707,\"journal\":{\"name\":\"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO.2013.6721038\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2013.6721038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of symmetry on the conductance of a graphene double dot
We numerically study the transport behavior of a graphene cavity delimited by two constrictions and divided into two dots by the tunnel barrier induced by the electrostatic action of a negatively biased gate. Performing an analysis, based on an envelope function approach, of the dependence of the conductance on the position of the tunnel barrier, we observe a maximum when the barrier is at the middle of the cavity, an effect similar, even though less pronounced, to that recently studied in devices based on semiconductor heterostructures.