毫米波带通滤波器采用高q圆锥电感和MOM电容

V. Vanukuru
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引用次数: 16

摘要

本文介绍了一种60ghz集总毫米波窄带通滤波器的有效实现方法。该毫米波滤波器采用布局优化的锥形螺旋电感,具有比标准螺旋电感更高的品质因数(Q)和自谐振频率值。该滤波器还使用数字间金属-氧化物-金属电容器,在这些高频下显示出比氮化金属-绝缘体-金属(MIM)电容器的Q值。该滤波器采用0.18 μm高电阻率射频绝缘体上硅CMOS技术制造。该滤波器中心频率为60 GHz, 3db带宽为8 GHz,分数带宽为13.3%,负载Q为7.5,占用面积为(150×215)μm2。该滤波器的蒙特卡罗模拟表明,由于仅使用两种顶级厚金属和排除MIM电容器,该滤波器对工艺变化具有出色的鲁棒性。
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Millimeter-wave bandpass filter using high-Q conical inductors and MOM capacitors
This paper describes an efficient implementation of a lumped millimeter(mm)-wave narrow bandpass filter at 60 GHz. The mm-wave filter uses layout optimized conical spiral inductors which are shown to have higher quality factor (Q) and self resonant frequency values than standard spiral inductors. The filter also uses interdigital metal-oxide-metal capacitors which are shown to have Q values than nitride metal-insulator-metal (MIM) capacitors at these high frequencies. The filter is fabricated in 0.18 μm high resistivity RF silicon-on-insulator CMOS technology. The filter has a center frequency of 60 GHz and 3 dB bandwidth of 8 GHz, with a fractional bandwidth of 13.3% and a loaded Q of 7.5 occupying an area of (150×215)μm2. Monte-carlo simulations of the filter demonstrate excellent robustness against process variations due to usage of only two top thick metals and exclusion of MIM capacitors.
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