医用x射线电源发生器高压级联倍增器等效寄生电容的解析分析

Jianing Wang, S. D. de Haan, J. Ferreira, P. Luerkens
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引用次数: 6

摘要

医用x光机的高压发生器的一个主要组成部分是高压倍增器。这通常是一个Cockcroft-Walton级联电路,从变压器乘以一个中等高电压到最终的高压电平,约为100kV。它通常作为电容输出的一部分安装在谐振变换器中。以往的研究表明,级联倍增器的寄生电容与谐振槽高度相关。对乘法器的等效寄生电容进行了数值分析,发现其与高压模块材料工艺的关系。然而,先前研究中的简化,例如假定串联二极管之间的电压分布相等,缺少大块电容器等,限制了等效电容特性的有效性。本文针对带有寄生电容的乘法器,提出了一种改进的近似电容网络,以呈现更真实的高压模块寄生模型。基于网络,对乘法器的等效电容进行了解析表示和分析。给出了电容与二极管结电容、结构电容、每链二极管数和级联馈电电压等参数的关系。根据实验结果,比较了硅(Si)二极管和碳化硅(SiC)二极管两种半导体技术的级联电容。获得了最小化级联电容的设计准则。
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Analytical analysis of the equivalent parasitic capacitance of the high-voltage cascade multiplier in medical application of X-ray power generator
A major component of high voltage (HV) generators for medical X-ray machines is the HV multiplier. This is typically a Cockcroft-Walton cascade circuit, multiplying a moderately high voltage from the transformer to the final high voltage level at round 100kV. It is often equipped in a resonant converter as a part of capacitive output. Previous work shows that the parasitic capacitance of the cascade multiplier becomes highly relevant to the resonant tank. The equivalent parasitic capacitance of the multiplier has been numerically analyzed to discover its dependence on the material technologies of the HV module. However, the simplifications in the previous research, such as assumed equal voltage distribution across series connected diodes, absence of bulk capacitors etc., give limitations to validity of the equivalent capacitance characteristics. In this paper, an improved approximate capacitance network is proposed for the multiplier with parasitic capacitances to exhibit a more realistic parasitic model of the HV module. Based on the network, the equivalent capacitance of the multiplier is analytically expressed and analyzed. The relationship between the capacitance and parameters including the diode junction capacitance, the structural capacitance, the number of diodes per chain and the feeding voltage of the cascade is shown. According to the results, the capacitances of the cascade are compared for two semiconductor technologies that are silicon (Si) diode and silicon carbide (SiC) diode. Design guidelines are obtained for the minimization of the cascade capacitance.
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