GaN/AlGaN hfet中短通道效应的控制

2006 European Microwave Integrated Circuits Conference Pub Date : 2006-09-01 DOI:10.1109/EMICC.2006.282751

M. Uren, D. Hayes, R. Balmer, D. Wallis, K. Hilton, J. O. Maclean, T. Martin, C. Roff, P. McGovern, J. Benedikt, P. Tasker

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引用次数: 34

摘要

由于缓冲掺杂不足，GaN/AlGaN hemt可能遭受短通道效应。研究表明，在MOVPE生长过程中，在GaN缓冲液中掺杂铁可以抑制0.25 μ m栅长器件中的所有短沟道效应。作者表明，优化后的铁掺杂对射频输出功率或膝脱(电流暴跌)没有影响，但显著提高了功率附加效率

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Control of Short-Channel Effects in GaN/AlGaN HFETs

GaN/AlGaN HEMTs can suffer from short channel effects as a result of insufficient buffer doping. The paper show that controlled iron doping of the GaN buffer during MOVPE growth can suppress all short-channel effects in 0.25mum gate length devices. The authors show that optimised iron doping has no effect on the RF output power or on the knee walkout (current-slump), but significantly improves the power added efficiency

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2006 European Microwave Integrated Circuits Conference

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