GaN HEMT中低场通道迁移率和寄生电阻温度依赖性的直流提取

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126533

Pradeep Dasari, S. Bhattacharya, S. Karmalkar

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引用次数: 2

摘要

GaN hemt的高温建模需要了解低场通道迁移率和寄生源/漏电阻的温度依赖性。我们讨论了在小漏源极电压下从漏极电流对栅极电压曲线中提取这种依赖关系。

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DC extraction of the temperature dependency of low field channel mobility and parasitic resistances in a GaN HEMT

High temperature modelling of GaN HEMTs requires a knowledge of the temperature dependency of low field channel mobility and parasitic source / drain resistances. We discuss extraction of this dependency from drain current versus gate voltage curve at small drain-source voltage.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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