{"title":"100Å氧化物的特性与可靠性","authors":"D. Baglee","doi":"10.1109/IRPS.1984.362035","DOIUrl":null,"url":null,"abstract":"The electrical characteristics and the long term reliability of 100Å silicon dioxide films is examined in detail. In this paper the initial \"as grown\" properties are presented and the effects of subsequent process steps are discussed. The long term reliability of 100Å oxide having undergone a full double level polysilicon process is examined. An activation energy of 0.3eV was found and electric field acceleration was determined to be 100/MV/cm.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Characteristics & Reliability of 100Å Oxides\",\"authors\":\"D. Baglee\",\"doi\":\"10.1109/IRPS.1984.362035\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical characteristics and the long term reliability of 100Å silicon dioxide films is examined in detail. In this paper the initial \\\"as grown\\\" properties are presented and the effects of subsequent process steps are discussed. The long term reliability of 100Å oxide having undergone a full double level polysilicon process is examined. An activation energy of 0.3eV was found and electric field acceleration was determined to be 100/MV/cm.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362035\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362035","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The electrical characteristics and the long term reliability of 100Å silicon dioxide films is examined in detail. In this paper the initial "as grown" properties are presented and the effects of subsequent process steps are discussed. The long term reliability of 100Å oxide having undergone a full double level polysilicon process is examined. An activation energy of 0.3eV was found and electric field acceleration was determined to be 100/MV/cm.
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