{"title":"中间波段太阳能电池的器件模拟","authors":"K. Yoshida, Y. Okada","doi":"10.1117/12.910993","DOIUrl":null,"url":null,"abstract":"The intermediate band (IB) solar cells is one of the candidates to realize a higher conversion efficiency than the Shockley-Queisser limit of single-junction solar cells. By using device simulation of intermediate solar cells developed based on drift-diffusion method, we studied the fundamental properties of IB cell. Light concentration technique is very important to reduce the recombination via IB.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Device simulation of intermediate band solar cells\",\"authors\":\"K. Yoshida, Y. Okada\",\"doi\":\"10.1117/12.910993\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The intermediate band (IB) solar cells is one of the candidates to realize a higher conversion efficiency than the Shockley-Queisser limit of single-junction solar cells. By using device simulation of intermediate solar cells developed based on drift-diffusion method, we studied the fundamental properties of IB cell. Light concentration technique is very important to reduce the recombination via IB.\",\"PeriodicalId\":337826,\"journal\":{\"name\":\"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-02-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.910993\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.910993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Device simulation of intermediate band solar cells
The intermediate band (IB) solar cells is one of the candidates to realize a higher conversion efficiency than the Shockley-Queisser limit of single-junction solar cells. By using device simulation of intermediate solar cells developed based on drift-diffusion method, we studied the fundamental properties of IB cell. Light concentration technique is very important to reduce the recombination via IB.