铁氟龙基底上低温退火自旋涂覆氧化锌薄膜的物理和电学特性

N. S. M. Sauki, M. Rahim, S. H. Herman, M. Mahmood
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引用次数: 1

摘要

研究了溶胶-凝胶自旋镀膜技术在聚四氟乙烯(Teflon)和玻璃基底上沉积ZnO薄膜的结构和电学性能。以脱水乙酸锌为前驱体,单乙醇胺为稳定剂,2-甲氧基乙醇为溶剂,制备了0.4M溶胶。薄膜分别在200°C、250°C和300°C退火。在每一层都进行了这种退火过程。电学表征表明,在200°C、250°C和300°C退火的Teflon衬底上沉积的薄膜的电导率分别约为0.176、0.0988和0.0952 S cm-1。另一方面,对于沉积在玻璃衬底上的薄膜,对于退火温度的相似变化,这些值分别为0.187,0.139和0.126 S cm-1。ZnO薄膜在玻璃基板上的电导率高于在聚四氟乙烯基板上的电导率。FESEM图像证实,两种衬底上的薄膜微观结构均由纳米颗粒组成。
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Physical and electrical characteristics of low-temperature annealed spin coated zinc oxide thin films on Teflon substrates
The structural, and electrical properties of ZnO thin films deposited by sol-gel spin coating technique, onto polytetrafluoroethylene (Teflon) and glass substrates have been investigated. 0.4M sol were prepared by using Zinc acetate dehydrate as precursor, monoethanolamine as stabilizer and 2-methoxyethanol as solvent. The thin films were annealed at 200°C, 250°C and 300°C. This annealing process was performed in every layer. Electrical characterization shows the conductivity of the films deposited onto Teflon substrates that annealed at 200°C, 250°C and 300°C were around 0.176, 0.0988, and 0.0952 S cm-1 respectively. On the other hand, for the thin films deposited on glass substrates, these values are 0.187, 0.139 and 0.126 S cm-1 for similar variation in the annealing temperature. The conductivity of the ZnO thin films on glass substrate was higher than those on Teflon substrates. FESEM images confirmed that microstructure of the thin films on both substrate consists of nanoparticles.
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