{"title":"多量子阱和超晶格结构GaAs/AlGaAs太阳能电池光电流的行波扩展态表征","authors":"X. Yang, Y. S. Liu, X. Jiang","doi":"10.1109/NUSOD.2012.6316503","DOIUrl":null,"url":null,"abstract":"The numerical simulations of the contribution of GaAs/AlGaAs multiple quantum well and superlattice to photocurrent in solar cells are presented. Effects of thickness of barrier and period on the extended and localized states, photocurrent have been investigated. Running wave method of calculation on the extended states of the two structures are adopt and compared.","PeriodicalId":337826,"journal":{"name":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Running wave form extended states in charactering the photocurrent of multiple quantum well and superlattice structured GaAs/AlGaAs solar cells\",\"authors\":\"X. Yang, Y. S. Liu, X. Jiang\",\"doi\":\"10.1109/NUSOD.2012.6316503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The numerical simulations of the contribution of GaAs/AlGaAs multiple quantum well and superlattice to photocurrent in solar cells are presented. Effects of thickness of barrier and period on the extended and localized states, photocurrent have been investigated. Running wave method of calculation on the extended states of the two structures are adopt and compared.\",\"PeriodicalId\":337826,\"journal\":{\"name\":\"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2012.6316503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 12th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2012.6316503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Running wave form extended states in charactering the photocurrent of multiple quantum well and superlattice structured GaAs/AlGaAs solar cells
The numerical simulations of the contribution of GaAs/AlGaAs multiple quantum well and superlattice to photocurrent in solar cells are presented. Effects of thickness of barrier and period on the extended and localized states, photocurrent have been investigated. Running wave method of calculation on the extended states of the two structures are adopt and compared.
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