{"title":"考虑光增益和电子密度非线性的量子阱激光器的光增益模拟","authors":"V. Lysak, I. Sukhoivanov","doi":"10.1109/ICTON.2000.874161","DOIUrl":null,"url":null,"abstract":"The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.","PeriodicalId":314041,"journal":{"name":"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation of an optical gain of quantum well lasers taking into account the optical gain and electron density nonlinearities\",\"authors\":\"V. Lysak, I. Sukhoivanov\",\"doi\":\"10.1109/ICTON.2000.874161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.\",\"PeriodicalId\":314041,\"journal\":{\"name\":\"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICTON.2000.874161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 2nd International Conference on Transparent Optical Networks. Conference Proceedings (Cat. No.00EX408)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2000.874161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation of an optical gain of quantum well lasers taking into account the optical gain and electron density nonlinearities
The influence of electron concentration on optical gain of semiconductor lasers is analysed. The comparison by integrated gain model and approached models for a range of active layer thickness change from 50 up to 1000 /spl Aring/ was carried out. The expression of the approximation model parameters change from the active layer thickness is determined.
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