{"title":"现代栅极电介质的介电击穿研究进展","authors":"E. Wu, J. Suñé","doi":"10.1109/IIRW.2013.6804141","DOIUrl":null,"url":null,"abstract":"In this talk, we first review the first BD and post BD statistics of high-k/SiO2 bilayer films (or high-κ stacks) by delineating similarities and differences from SiO2 single-layer films. Then, we will discuss the recent progress on TDDB voltage and temperature dependence in a two-step model of species-release and reaction process. This model is found to be applicable to both SiO2 and high-κ stacks (pFET inversion mode) and provide a sound physical picture for overall BD process. Finally, we will highlight the challenges in AC TDDB reliability, specifically related to nFET inversion mode of high-k stacks.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Recent advances in dielectric breakdown of modern gate dielectrics\",\"authors\":\"E. Wu, J. Suñé\",\"doi\":\"10.1109/IIRW.2013.6804141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this talk, we first review the first BD and post BD statistics of high-k/SiO2 bilayer films (or high-κ stacks) by delineating similarities and differences from SiO2 single-layer films. Then, we will discuss the recent progress on TDDB voltage and temperature dependence in a two-step model of species-release and reaction process. This model is found to be applicable to both SiO2 and high-κ stacks (pFET inversion mode) and provide a sound physical picture for overall BD process. Finally, we will highlight the challenges in AC TDDB reliability, specifically related to nFET inversion mode of high-k stacks.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804141\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recent advances in dielectric breakdown of modern gate dielectrics
In this talk, we first review the first BD and post BD statistics of high-k/SiO2 bilayer films (or high-κ stacks) by delineating similarities and differences from SiO2 single-layer films. Then, we will discuss the recent progress on TDDB voltage and temperature dependence in a two-step model of species-release and reaction process. This model is found to be applicable to both SiO2 and high-κ stacks (pFET inversion mode) and provide a sound physical picture for overall BD process. Finally, we will highlight the challenges in AC TDDB reliability, specifically related to nFET inversion mode of high-k stacks.
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