系统级纳米级设计中填充金属生成方法的时序含义

A. Nieuwoudt, J. Kawa, Y. Massoud
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引用次数: 2

摘要

在本文中,我们研究了在65nm工艺技术中实现大规模设计的假填充的时间含义。对于每个设计,我们采用了基于规则和基于模型的金属填充生成技术,并对由于填充金属而导致的增量路径延迟增加和互连平面化水平进行了建模。结果表明,填充金属会导致平均延迟和单个路径延迟的显著增加。我们还发现,与基于规则的方法相比,基于模型的填充生成方法可以提供更好的增量延迟增加和互连平面化。该研究首次全面研究了基于规则和基于模型的填充生成对纳米级工艺技术中大规模设计的延迟和互连平面化影响。
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Timing implications of fill metal generation methods for system-level nano-scale designs
In this paper, we investigate the timing implications of dummy fill for large-scale designs implemented in 65 nm process technology. For each design, we employ each of rule-based and model-based metal fill generation techniques and model the incremental path-wise delay increases and the level of interconnect planarization due to the fill metal. The results indicate that fill metal can cause significant increases in the average delay and in the individual path delays. We also find that model-based fill generation methods can provide significantly better incremental delay increases and interconnect planarization than rule-based methods. This study provides the first comprehensive investigation of the delay and interconnect planarization implications of rule-based as well as model-based fill generation for large-scale designs implemented in nano-scale process technology.
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