x波段异质结构带间隧道效应场效应管(HITFET) vco

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) Pub Date : 1998-11-01 DOI:10.1109/GAAS.1998.722667

V. Nair, N. El-Zein, J. Lewis, M. Deshpande, G. Kramer, M. Kyler, G. Maracas, H. Goronkin

{"title":"x波段异质结构带间隧道效应场效应管(HITFET) vco","authors":"V. Nair, N. El-Zein, J. Lewis, M. Deshpande, G. Kramer, M. Kyler, G. Maracas, H. Goronkin","doi":"10.1109/GAAS.1998.722667","DOIUrl":null,"url":null,"abstract":"This paper reports on the DC and microwave performance of novel X-band voltage controlled oscillators fabricated by integrating heterostructure interband tunneling diode (HITD) with a heterostructure FET. The measured RF performance of VCOs incorporating single and double HITDs is discussed. The power output of the single HITD VCO was 2.0 dBm and that of the dual HITD was 4.3 dBm at a center frequency of 8.2 GHz. The dual HITD VCO also exhibited a wider tuning range than the single HITD VCO. The phase noise of these VCOs was approximately -128 dBc, 3 MHz away from the center frequency.","PeriodicalId":288170,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"X-band heterostructure interband tunneling FET (HITFET) VCOs\",\"authors\":\"V. Nair, N. El-Zein, J. Lewis, M. Deshpande, G. Kramer, M. Kyler, G. Maracas, H. Goronkin\",\"doi\":\"10.1109/GAAS.1998.722667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the DC and microwave performance of novel X-band voltage controlled oscillators fabricated by integrating heterostructure interband tunneling diode (HITD) with a heterostructure FET. The measured RF performance of VCOs incorporating single and double HITDs is discussed. The power output of the single HITD VCO was 2.0 dBm and that of the dual HITD was 4.3 dBm at a center frequency of 8.2 GHz. The dual HITD VCO also exhibited a wider tuning range than the single HITD VCO. The phase noise of these VCOs was approximately -128 dBc, 3 MHz away from the center frequency.\",\"PeriodicalId\":288170,\"journal\":{\"name\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1998.722667\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1998.722667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

本文报道了异质结构带间隧道二极管(HITD)与异质结构场效应管集成制成的新型x波段压控振荡器的直流和微波性能。讨论了采用单、双hdd的压控振荡器的射频性能。在中心频率为8.2 GHz时，单HITD VCO输出功率为2.0 dBm，双HITD VCO输出功率为4.3 dBm。双HITD VCO也比单HITD VCO表现出更宽的调谐范围。这些vco的相位噪声约为-128 dBc，距离中心频率为3 MHz。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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X-band heterostructure interband tunneling FET (HITFET) VCOs

This paper reports on the DC and microwave performance of novel X-band voltage controlled oscillators fabricated by integrating heterostructure interband tunneling diode (HITD) with a heterostructure FET. The measured RF performance of VCOs incorporating single and double HITDs is discussed. The power output of the single HITD VCO was 2.0 dBm and that of the dual HITD was 4.3 dBm at a center frequency of 8.2 GHz. The dual HITD VCO also exhibited a wider tuning range than the single HITD VCO. The phase noise of these VCOs was approximately -128 dBc, 3 MHz away from the center frequency.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)

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