{"title":"一种用于3 - 5ghz超宽带无线接收机的超宽带CMOS低噪声放大器","authors":"Jianfeng Su, Z. Fu, Haiquan Yuan, Minghui Zeng","doi":"10.1109/ICASIC.2007.4415653","DOIUrl":null,"url":null,"abstract":"An UWB (ultra wide band) low noise amplifier (LNA), which is designed with the HJTC's 0.18 mum CMOS process, is presented in this paper. Simulation results show a gain from 10 to 13.3 dB over a bandwidth range from 3 to 5 GHz. This LNA achieves a noise figure less than 5.5 dB and power dissipation less than 12.5 mW under a power supply of 1.8 V. The input/output return loss is higher than 9/14 dB.","PeriodicalId":120984,"journal":{"name":"2007 7th International Conference on ASIC","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"An Ultra-Wideband CMOS low noise amplifier For 3–5 GHz UWB wireless receivers\",\"authors\":\"Jianfeng Su, Z. Fu, Haiquan Yuan, Minghui Zeng\",\"doi\":\"10.1109/ICASIC.2007.4415653\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An UWB (ultra wide band) low noise amplifier (LNA), which is designed with the HJTC's 0.18 mum CMOS process, is presented in this paper. Simulation results show a gain from 10 to 13.3 dB over a bandwidth range from 3 to 5 GHz. This LNA achieves a noise figure less than 5.5 dB and power dissipation less than 12.5 mW under a power supply of 1.8 V. The input/output return loss is higher than 9/14 dB.\",\"PeriodicalId\":120984,\"journal\":{\"name\":\"2007 7th International Conference on ASIC\",\"volume\":\"161 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 7th International Conference on ASIC\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICASIC.2007.4415653\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 7th International Conference on ASIC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASIC.2007.4415653","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Ultra-Wideband CMOS low noise amplifier For 3–5 GHz UWB wireless receivers
An UWB (ultra wide band) low noise amplifier (LNA), which is designed with the HJTC's 0.18 mum CMOS process, is presented in this paper. Simulation results show a gain from 10 to 13.3 dB over a bandwidth range from 3 to 5 GHz. This LNA achieves a noise figure less than 5.5 dB and power dissipation less than 12.5 mW under a power supply of 1.8 V. The input/output return loss is higher than 9/14 dB.