一种0.13 μm低功耗无竞赛可编程逻辑阵列

G. Samson, L. Clark
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引用次数: 2

摘要

本文描述了一种使用NAND门和NOR门分别作为与和或逻辑平面的PLA。介绍了电路设计、时序和功率优势。与传统的聚乳酸设计相比,在130纳米工艺上实现了近50%的功耗节约,延迟成本低于10%。新的PLA电路已在130 nm低待机功率工艺上制造,并且测试硅在VDD = 1.5 V时工作在905 MHz
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A 0.13 μm Low-power Race-free Programmable Logic Array
A PLA using NAND and NOR gates for the AND and OR logic planes, respectively, is described. The circuit design, timing and power advantages are described. Nearly 50% power savings over a conventional PLA design is achieved on a 130 nm process at less than 10% delay cost. The new PLA circuit has been fabricated on a 130 nm low standby power process and tested silicon operates at 905 MHz at VDD = 1.5 V
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