部分耗尽SOI mosfet的小信号模型及其参数提取

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004035

D. Tomaszewski, L. Lukasiak, K. Domanski, A. Jakubowski

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引用次数: 1

摘要

提出了一种新的部分耗尽SOI mosfet的非准静态小信号模型，并给出了参数提取方法。并给出了一种从实验数据中消除寄生电容的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Small-signal model of partially-depleted SOI MOSFETs and its parameter extraction

A new non-quasi static small-signal model of partially-depleted SOI MOSFETs is presented together with parameter extraction procedure. A method to eliminate parasitic capacitances from experimental data is also shown.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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