{"title":"一个MIC推挽式场效应管放大器","authors":"B. Geller, M. Cohn","doi":"10.1109/MWSYM.1977.1124401","DOIUrl":null,"url":null,"abstract":"A push-pull power amplifier, in which the required anti-phase RF voltages result from the use of inherently symmetric and frequency-independent slot line tees, is described. Measurements of the fundamental and hamonic response of this amplifier, which uses an unpackaged, two-cell FET chip and exhibits the well known fourfold impedance advantage over parallel operation, are reported.","PeriodicalId":299607,"journal":{"name":"1977 IEEE MTT-S International Microwave Symposium Digest","volume":"127 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1977-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"An MIC Push-Pull FET Amplifier\",\"authors\":\"B. Geller, M. Cohn\",\"doi\":\"10.1109/MWSYM.1977.1124401\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A push-pull power amplifier, in which the required anti-phase RF voltages result from the use of inherently symmetric and frequency-independent slot line tees, is described. Measurements of the fundamental and hamonic response of this amplifier, which uses an unpackaged, two-cell FET chip and exhibits the well known fourfold impedance advantage over parallel operation, are reported.\",\"PeriodicalId\":299607,\"journal\":{\"name\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"127 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1977-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1977.1124401\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1977.1124401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A push-pull power amplifier, in which the required anti-phase RF voltages result from the use of inherently symmetric and frequency-independent slot line tees, is described. Measurements of the fundamental and hamonic response of this amplifier, which uses an unpackaged, two-cell FET chip and exhibits the well known fourfold impedance advantage over parallel operation, are reported.
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