神经元- mos在电流型多值逻辑电路中的应用

Proceedings. 1998 28th IEEE International Symposium on Multiple- Valued Logic (Cat. No.98CB36138) Pub Date : 1998-05-27 DOI:10.1109/ISMVL.1998.679320

Jing Shen, K. Tanno, O. Ishizuka, Zheng Tang

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引用次数: 7

摘要

神经元- mos晶体管(neural - mos Transistor, vMOS)是一种高性能器件，可用于实现新结构的基本电流模多值逻辑电路(MVL)。本文介绍了一种新型的vMOS电流反射镜和阈值检测器电路。与传统CMOS电路相比，vMOS电流反射镜具有低功耗、高摆幅的优点，而vMOS阈值检测器具有更好的判别能力。在此基础上，提出了基于vMOS的电流型四元t栅MVL功能电路。通过HSPICE仿真验证了电路的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Application of neuron-MOS to current-mode multi-valued logic circuits

A highly-functional device called Neuron-MOS Transistor (vMOS) has been applied to implementing new-architecture basic current-mode multi-valued logic (MVL) circuits. The novel current mirror and threshold detector circuits using vMOS are described in this paper. As compared to conventional CMOS circuits the vMOS current mirror has advantages of low-power and high-swing while the vMOS threshold detector has better discrimination ability. Furthermore, the MVL functional circuit-current-mode quaternary T-gate basing vMOS is presented. Performances of the circuits are confirmed by HSPICE simulations.

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Proceedings. 1998 28th IEEE International Symposium on Multiple- Valued Logic (Cat. No.98CB36138)

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