先进SOI和批量FinFET技术中的ESD保护设计概述

2020 IEEE Custom Integrated Circuits Conference (CICC) Pub Date : 2020-03-01 DOI:10.1109/CICC48029.2020.9075904

You Li, M. Miao, R. Gauthier

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引用次数: 2

摘要

FinFET时代给ESD保护带来了新的挑战。概述了在先进SOI和体FinFET技术中的ESD设计。探索了设计创新和器件优化，以实现有效的ESD保护。研究了预测ESD建模和仿真，以优化ESD保护，并确保FinFET技术中的芯片ESD设计时间正确。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESD Protection Design Overview in Advanced SOI and Bulk FinFET Technologies

The FinFET era brings new challenges to ESD protection. An overview of ESD design in advanced SOI and bulk FinFET technologies are presented. The design innovations and device optimizations are explored to achieve an effective ESD protection. The predictive ESD modeling and simulations are studied to optimize ESD protection and ensure first-time-right chip ESD design in FinFET technologies.

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2020 IEEE Custom Integrated Circuits Conference (CICC)

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